Preparation of Silicon Carbide by Chemical Vapor Deposition
نویسندگان
چکیده
منابع مشابه
Simulations of Silicon Carbide Chemical Vapor Deposition
ii by using insulation material correctly, a more uniform temperature distribution can be obtained. A model for the growth of SiC is used to predict growth rates at various process parameters. A number of possible factors influencing the growth rate are investigated using this model. The importance of including thermal diffusion and the effect of etching by hydrogen is shown, and the effect of ...
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ژورنال
عنوان ژورنال: Journal of the Ceramic Association, Japan
سال: 1983
ISSN: 0009-0255,1884-2127
DOI: 10.2109/jcersj1950.91.1059_502